| PART |
Description |
Maker |
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
|
| CM300DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060
1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060
DC-DC CONVERTER 50~60W DC - DC转换器的5060
XC2VP7-6FFG672C DC - DC转换器的5060
2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060
DC-DC CONVERTER 50~60W 的DC - DC转换器的5060
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| XC2S100-5FG256C XC2S100-5FG256I XC2S100 XC2S15-5VQ |
Spartan-II FPGA Family Data Sheet
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP144
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PBGA256
150000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 150000 GATES, 263 MHz, PBGA456
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA256
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA456
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PQFP144
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP100
150 000 SYSTEM GATE 2.5 VOLT FPGA (IQ AU - NOT RECOMMENDED for NEW DESIGN
15000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
50000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
Spartan-II FPGA Family
Second generation ASIC replacement technology
|
Xilinx, Inc.
XILINX INC
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
